Patents:
- R. Gomez, R. Bashir, "Biosensor and related method", Allowed Sept 30th, 2008.
- R. Bashir, L. Razouk, D. M. Morisette, B. Erimli, US Patent # 7,413,891, August 19th, 2008. "Apparatus and Method for Detecting Live Cells with an Integrated Filter and Growth Detection Device".
- R. Gomez, R. Bashir; A. K. Bhunia, M. Ladisch, J. P. Robinson, US Patent # 7,306,924, Dec 11th, 2007. "Biosensor and Related Method".
- R. Bashir, N. Peppas, Z. Hilt, A. Gupta, US Patent # 6,935,165, Aug 30th, 2005. "Microscale sensor element and related device and method of manufacture.
- R. Bashir, R. Gomez, M. Ladisch, A. Bhunia, J. P. Robinson, US Patent # 6,716, 620, April 6th, 2004, "Biosensor and Related Method".
- J. M. McGregor, Rashid Bashir, Wipawan Yindeepol, U. S. Patent #6,362,064, March 26th , 2002, "Elimination of walkout in high voltage trench isolated devices".
- E. Kabir, R. Bashir, U. S. Patent #6,346,452, February 12th, 2002, "Method for controlling an N-type dopant concentration depth profile in bipolar transistor epitaxial layers".
- R. Bashir, W. Yindeepol, U. S. Patent #6,121,148, Granted September 19th, 2000, "Semiconductor device trench isolation structure with polysilicon bias voltage contact".
- P. Moore, R. Bashir, U.S. Patent #6051466 granted April 18th, 2000, "Thin Liquid Crystal Transducer Pixel Cell Having Self-Aligned Support Pillers".
- R. Bashr, A. E. Kabir, U. S. Patent #6,012,335, Granted Jan 11th, 2000, "High sensitivity micro-machined pressure sensors and acoustic transducers".
- R. Bashir, U.S. Patent #5952706 granted Sept 14th, 1999, "Semiconductor Integrated Circuit Having a Lateral Bipolar Transistor Compatible with Deep Sub-Micron CMOS Processing".
- R. Bashir; F. Hebert, U. S. Patent #5930635 granted July 27th, 1999, "Complementary Si/SiGe Heterojunction Bipolar Technology".
- R. Bashir, W. Yindepool, U. S. Patent #5914523 granted June 22nd, 1999, "Semiconductor device trench isolation structure with polysilicon bias voltage contact"
- R. Bashir, A. E. Kabir, U. S. Patent #5888845 granted March 30th, 1999, "Method of Making High Sensitivity Micro-machined Pressure Sensor and Acoustic Transducer".
- R. Bashir, A. E. Kabir, F. Hebert, U. S. Patent # 5856239, granted Jan 5th, 1999, "Tungsten silicide/ tungsten polycide anisotropic dry etch process".
- R. Bashir, F. Hebert, D. Chen, U. S. # 5827762 granted Oct 27th, 1998, "Method for forming buried interconnect structue having stability at high temperatures".
- W. Yindepool, J. McGregor, K. Brown, R. Bashir, U. S. Patent # 5,811,315 granted September 22nd, 1998, "Method of Forming and Planarizing Deep Isolation Trenches in a Silicon-on-insulator (SOI) Structure".
- F. Hebert, R. Bashir, U. S. Patent #5,773,350 granted June 30th, 1998, "Method of forming a Self Aligned BJT with Silicide Extrinsic Base Contacts and Selective Epitaxial Grown Intrinsic Base".
- R. Bashir, U. S. Patent #5,780,343 granted June 15th, 1998, "A Simple Process to Produce High Quality Silicon Surface Prior to Selective Epitaxial Growth".
- R. Bashir, A. E. Kabir, U. S. Patent #5,747,353 granted May 5th, 1998, "Method of making Surface Micro-machined Accelerometers using Silicon on Insulator Technology".
- F. Hebert, R. Bashir, D. Chen, U. S. Patent #5,691,232 granted Nov. 25th, 1997, "Planarized Trench and Field Oxide Isolation Scheme"
- F. Hebert, R. Bashir, D. Chen, U. S. Patent #5,683,932 granted Nov. 4th, 1997, "Planarized Trench and Field Oxide Isolation Scheme".
- F. Hebert, R. Bashir, D. Chen, U. S. Patent # 5,681,776 granted Oct. 28th, 1997, "Planar Selective Field Oxide Isolation Process and Structrues".
- R. Bashir, F. Hebert, U. S. Patent # 5,581,114 granted Dec. 3rd, 1996, "Self-Aligned Polysilicon Base Contact in a Bipolar Junction Transistor".
- F. Hebert, D. Chen, R. Bashir, U. S. Patent # 5,439,833 granted Aug. 8th, 1995, "Method of making Truely Complementary and Self-Aligned Bipolar and CMOS Transistors with Minimized Base and Gate Resistances and Parasitic Capacitances".
- R. Bashir, F. Hebert , U. S. Patent # 5,451,532 granted Sept 19th, 1995, "Process for Making Self-Aligned Base Polysilicon or Polysilicide Contacts in Bipolar Transistors".
- R. Bashir, F. Hebert, D. Chen, U. S. Patent # 5,411,913, granted May 2nd, 1995, "Simple Planarized Trench Field Oxide and Poly Isolation Scheme".
- R. Bashir, F. Hebert, U. S. Patent # 5,397,722 granted March 14th, 1995, "Process for Making Self-Aligned Source/Drain Polysilicon or Polysilicide Contacts in Field Effect Transistors".
- R. Bashir, F. Hebert, D. Chen, U. S. Patent # 5,385,861 granted Jan. 31st, 1995 "Planarized Trench and Field Oxide and Poly Isolation Scheme-Method".
- G. W. Neudeck, R. Bashir, U. S. Patent # 5,434,092 granted July 18th, 1995, "Method for fabricating a triple self-aligned bipolar junction transistor ".
- G. W. Neudeck, R. Bashir, U. S. Patent # 5,382,828 granted Jan. 17th, 1995, "Triple Self-Aligned Bipolar Junction Transistor-Method".
- G. W. Neudeck, R. Bashir, U. S. Patent # 5,286,996 granted Feb. 15th, 1994, "Triple Self-Aligned Bipolar Junction Transistor-Structure".
Patents Pending/Being Prepared:
- R. Bashir, D. Begstrom, et al. "Bioinspired Assembly of Semiconductor
ICs", US Patent application filed in 2001.
- R. Bashir, N. Peppas, Z. Hilt, A. Gupta, "Cantilever Sensor
for Cell Viability", US Patent application filed in 2001.
- R. Gomez, R. Bashir, M. Ladisch, J. P. Robinson, A. Bhunia,
"Biosensor Process and Method", US Patent CIP application filed
in 2002.
- R. Gomez, R. Bashir, M. Ladisch, A. Bhunia,"Biosensor Process
and Method", US Divisional Patent application filed in 2002.
- R. Bashir, D. Bergstrom, "DNA-based Assembly of Electronic Devices:
Novel IC Fabrication Processes and Heterogeneous Integration of
Materials", US Patent application filed.
- R. Bashir, D. Morisette, L. Razouk, B. Erimli, “Integrated
Biochips with Filters and Detection of Metabolic Activity”,
US Patent Filed Feb 2003.
- R. Bashir, A. Gupta, D. Morisette, O. H. Elibol, G. W. Neudeck,
J. P. Denton, “Device For Detecting Biological And Chemical
Particles”, US Patent And PCT Filed Jun 29th, 2004.
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